| PART |
Description |
Maker |
| HMC586LC4B |
4 - 8 GHz, 5dBm Pout, -100dBc/Hz SSB Phase Noise@100kHz
WIDEBAND MMIC VCO w/ BUFFER AMPLIFIER, 4.0 - 8.0 GHz
|
Hittite Microwave Corporation
|
| TIM5964-80SL08 |
IM3=-30 dBc at Pout= 42.0dBm Single Carrier Level
|
Toshiba Semiconductor
|
| TIM3742-12UL09 |
HIGH POWER P1dB=41.5dBm at 3.7GHz to 4.2GHz
|
Toshiba Semiconductor
|
| TIM6472-4UL09 |
HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz
|
Toshiba Semiconductor
|
| TIM7179-8UL06 |
HIGH POWER P1dB=39.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| TIM4450-4UL06 |
HIGH POWER P1dB=36.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
| TIM1414-10LA-252 |
HIGH POWER P1dB=39.5dBm at 13.75GHz to 14.5GHz
|
Toshiba Semiconductor
|
| AWT6132R AWT6132RM5P8 AWT6132RM5P9 |
415 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module
|
ANADIGICS, Inc
|
| AWT6136M5P8 AWT6136RM5P8 |
450 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module
|
ANADIGICS, Inc.
ANADIGICS INC
|
| P1000-1215 PDFP1000-1215 |
1 kWatt RF Pout
Input and Output Matched to 50 Ohms
|
Advanced Semiconductor
|
| BGA612 |
Silicon MMICs - SiGe 0...5GHz, 15dB Broadband Amplifier, Pout = 8dBm, SOT343
Silicon Germanium Broadband MMIC Amplifier
|
INFINEON[Infineon Technologies AG]
|
